Gallium nitride（GaN）material is a kind of wide bandgap material，suitable for manufacturing high frequency，high power，high temperature resistant，radiation resistant semiconductor microelectronic devices，etc. It has great application prospects in both military and civilian fields. After continuous promotion in the United States and other countries since the 21st century，GaN devices and process technologies have matured rapidly，and a large number of products have been launched，and have been used in many weapons under research. GaN devices have balanced performance，energy efficiency，size，reliability，and cost，and have replaced the market for mature GaAs and silicon laterally diffused metal oxide semiconductors（LDMOS）.